Work

Bound states at semiconductor–Mott insulator interfaces

Year: 2025

Type: article

Abstract: Utilizing the hierarchy of correlations in the context of a Fermi-Hubbard model, we deduce the presence of quasiparticle bound states at the interface between a Mott insulator and a semiconductor, as well as within a semiconductor–Mott–semiconductor heterostructure forming a quantum well. In the case of the solitary interface, the existence of bound states necessitates the presence of an additional perturbation with a minimal strength depending on the spin background of the Mott insulator. Conversely, within the quantum well, this additional perturbation is still required to have bound states while standing-wave solutions even exist in its absence.

Source: Physical review. B./Physical review. B

DOI: 10.1103/ywd2-bh2w

Authors: Jan Verlage, Peter Kratzer

Institution: University of Duisburg-Essen

Language: English

Topic: Cold Atom Physics and Bose-Einstein Condensates

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Funder: Deutsche Forschungsgemeinschaft

Award: G4144637556