Growth behavior during metalorganic chemical vapor deposition of MoS 2 using di-tert-butyl sulfide as organic sulfur precursor
Year: 2025
Type: article
Abstract: Metalorganic chemical vapor deposition is a promising synthesis technique for two-dimensional materials such as MoS 2 . In this study, we controlled the growth mode of MoS 2 on SiO 2 using Mo(CO) 6 and di-tert-butyl sulfide as precursors by adjusting the process conditions. The growth was directed from amorphous deposition at 400 ∘ C and 500 ∘ C, to crystalline MoS 2 at 600 ∘ C and higher. From 750 ∘ C, not only MoS 2 grains were deposited, but Mo metal nuclei were also formed during the process. An enhancement of the grain size was achieved by increasing the S/Mo precursor ratio. A more effective method to enlarge the grains and to lower the number density of crystals was to anneal the SiO 2 substrate in Ar atmosphere prior to deposition. The reduced number density suggested that the pretreatment increased the diffusion length of Mo adatom species on the surface. Furthermore, addition of H 2 to the N 2 carrier gas had two effects on the growth mode, without altering the amount of deposited Mo. On one hand, due to a higher fraction of H 2 in the carrier gas, the grain size slightly increased, and on the other hand, a change towards Mo metal deposition was observed. Control of the process conditions offers the opportunity to deposit large MoS 2 grains without co-depositing Mo metal.
Source: Nanotechnology
Institutions: Eindhoven University of Technology, IMEC, Aixtron (Germany), KU Leuven
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,325
OpenAlex ID: W4417444138