Work

Field-effect transistors based on an In 2 Se 3 -graphene vdW ferroelectric heterojunction for high-performance and low-power logic applications

Year: 2025

Type: article

Source: Physical Chemistry Chemical Physics

DOI: 10.1039/d5cp03889h

Authors: Miao-Wei Zhao, Jian-Qing Dai, Jin Yuan, Da-Wei Deng, Yun-Ya Zhong, Cai-Hong Wen

Institution: Kunming University of Science and Technology

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G5015633770

OpenAlex ID: W4417444402

FWCI: 0.212

Cites: 42

Cited by: 1

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