Work

Optically Active Point Defects in 4H–SiC: Identification of Microscopic Mechanisms and Prospects for Quantum Applications

Year: 2025

Type: article

Source: Advanced Functional Materials

DOI: 10.1002/adfm.202526154

Authors: Xin Zhao, Mingzhe Liu, Qi Zhang, Chang‐Kui Duan

Institutions: University of Science and Technology of China, Zhejiang University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1064054313, G2431739284, G5434592557

OpenAlex ID: W4417449442

FWCI: 0.907

Cites: 165

Cited by: 4

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