Year: 2025
Type: article
Abstract: This article "Causes of leakage current in vertical GaN pn diode under reverse bias" by Tomoaki Sumi et al. (10.1002/pssb.202500026) explored the primary causes of reverse leakage current in GaN p–n junction diodes grown on freestanding GaN substrates. The authors concluded that nonuniform distribution of carrier concentration inside the GaN film can be one of the primary causes of large reverse leakage current - a factor primarily overlooked by traditional measurement techniques. The authors also reported the formation of pits with high incorporation of impurities, leading to an increase in the carrier concentration thereby suppressing the development of the depletion layer under reverse bias.
Source: physica status solidi (b)
DOI: 10.1002/pssb.70129
Authors: Tomoaki Sumi, Hiroyuki Handa, Masahiro Ogawa, Naohiro Tsurumi, Junichi Takino, Satoshi Tamura, Yoshio Okayama
Institution: Panasonic (Japan)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4417453312
FWCI:
Cites:
Cited by:
Related to: