Work

Degradation comparative study of SIC MOSFETs with different gate structures under dynamic gate stress

Year: 2025

Type: conference-paper

Source: IET conference proceedings.

DOI: 10.1049/icp.2025.3618

Authors: Ran Guo, Yuan Chen, Xiaoling Zhang

Institutions: Beijing University of Technology, China Electronic Product Reliability and Environmental Test Institute

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4417455625

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