Work

Current Rectification in a Sub-2 nm CNT/V-Doped WS 2 /MoS 2 /CNT Vertical Monolayer P–N Diode

Year: 2025

Type: article

Source: ACS Nano

DOI: 10.1021/acsnano.5c13793

Authors: Van Dam Do, Van Tu Vu, Van Cao Nguyen, Vu Khac Dat, Whan Kyun Kim, Thi Uyen Tran, Minh Chien Nguyen, Ngoc Thanh Duong, Anthony Cabanillas, Huamin Li, Woo Jong Yu

Institutions: Sungkyunkwan University, Samsung Electronics (South Korea), University at Buffalo, State University of New York

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, Korea Institute for Advancement of Technology, National Research Foundation of Korea, Samsung

Awards: G1594651604, G2473271270, G429416598, G433951634, G440975262, G4950458384, G4979119625, G5410716640, G5620895499

OpenAlex ID: W4417466873

FWCI: 0.627

Cites: 84

Cited by: 3

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