Enhanced emission efficiency and directionality in InGaN/GaN microLEDs laterally enclosed by distributed Bragg reflectors
Year: 2025
Type: article
Abstract: Enhancing the efficiency and beam directivity of GaN micron-scale light-emitting diodes (µLEDs) is critical for visible-light communication, which has emerged as a promising platform for high-bandwidth optical links in data-center environments. We demonstrate a µLED design where the emitting mesa is laterally enclosed by a distributed Bragg reflector (DBR). This design achieves ∼20% higher optical output through air-side emission and ∼130% higher optical output through substrate-side emission with ∼30% reduced divergence compared to reference devices enclosed by a TiO 2 film. Our results present a manufacturable route to efficient, directional µLEDs with applications in optical interconnects and advanced display technologies.
Source: Optics Express
DOI: 10.1364/oe.583145
Authors: Roark Chao, Stephen Gee, Alejandro M. Quevedo, Wesley K. Mills, Tanay Tak, Hunter S. Larson, Kent N. Nitta, Shuji Nakamura, Jon A. Schuller, Steven P. DenBaars
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
Awards: G1990863968, G7123369682
OpenAlex ID: W4417494173