Work

Close space physical vapor transport growth of SiC, doped layers and thin crystals

Year: 2025

Type: article

Abstract: Close space physical vapor transport growth was applied to prepare SiC layer stacks for application in photonic applications. Due to flexible setting of the axial T-temperature gradient while keeping a low radial T-gradient, growth conditions for various SiC polytypes like 4H-SiC, 6H-SiC and also 3C-SiC are possible. Using 4° off-axis 4H-SiC seed wafers a high polytype stability of 25 to 150 µm thick layers grown on C-face as well as on Si-face substrates was observed. It is found that the ballistic growth regime enables a high efficiency of the dopant transfer, which enables highly p-type doped layer deposition. The found results indicate that CS-PVT can be used to replace epitaxial growth of layers for power electronic applications.

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2025.128474

Authors: Sven Strüber, Lucrezia Tana, Ole Schneider, Cristina Grazzi, Tobias Wagner, Peter Wellmann

Institution: Friedrich-Alexander-Universität Erlangen-Nürnberg

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,110

Funders: Deutsche Forschungsgemeinschaft, HORIZON EUROPE Framework Programme