Work

Adjusting the Energy Levels of HgTe and InAs Nanocrystals with Alkali Ions

Year: 2025
Type: article
Abstract: The photodiode stack is the most effective design geometry for integrating colloidal nanocrystals (NCs) into optoelectronic devices dedicated to light emission and detection. Traditional designs rely on determining the absolute energy band alignment, followed by selecting suitable materials to transport charges (with energy levels resonant to the active material’s bands). Because of this method’s inherent limitations, we propose to explore an alternative approach where alkali metals are used to tune the absolute energy levels of the optically active layer. We illustrate this concept using lithium and cesium deposition onto narrow band gap NC films (i.e., HgTe and InAs), that are relevant materials for infrared optoelectronics. Our results show that work function shifts up to 0.9 eV can be achieved and that smaller alkalis are more effective at generating this shift. However, different behaviors are observed for HgTe and InAs. In the case of II–VI materials, the alkali acts as a pure dipole (i.e., no shift in the core level) and the film behaves as a bulk effective medium (i.e., no evidence of alkali intercalation). For III–V NCs, the alkali plays a dual role as both a dipole and a redox agent, making the alkali’s effect dependent on the NCs’ surface-to-volume ratio and the size of the alkali.
Language: English
Open Access status: green
OpenAlex ID: W4417506523
FWCI:
Cites: 43
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