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Atomistic Structure of Transient Switching States in Ferroelectric AlScN

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Year: 2025
Type: article
Source: Physical Review Letters
DOI: 10.1103/lfdh-86x6
Authors: Jiawei Huang, Jinyang Li, Xinyue Guo, Tongqi Wen, David J. Srolovitz, Zhen Chen, Zuhuang Chen, Shi Liu
Institutions: Hong Kong University of Science and Technology, Harbin Institute of Technology, Tsinghua University, University of Hong Kong, Chinese Academy of Sciences, Institute of Physics, University of Chinese Academy of Sciences, Westlake University
Language: English

Topic: Ferroelectric and Negative Capacitance Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Basic and Applied Basic Research Foundation of Guangdong Province, Natural Science Foundation of Zhejiang Province
Awards: G1222129960, G1943835071, G245484933, G4944932938, 铁电拓扑结构中关联氧空位的序构与物性调控, G7122584779, G7551072482, G7582317919
OpenAlex ID: W4417515686
FWCI: 1.813
Cites: 64
Cited by: 8
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