Work

Tailoring structural and optical properties of Si-doped HfO2 thin films via target composition and plasma environment

Year: 2025

Type: article

Abstract: Optical and structural properties of as-deposited Si-doped HfO2 thin films were investigated as a function of target composition, substrate temperature (100…500 °C), and plasma environment. The films were deposited on Si (100) substrates by RF magnetron sputtering from composite Si:HfO2 targets in either pure argon or argon–hydrogen plasma. The Si content in the films was varied by adjusting the target composition, the hydrogen fraction in the plasma, and the total pressure. TEM, FT...

Source: Semiconductor Physics Quantum Electronics & Optoelectronics

DOI: 10.15407/spqeo28.04.441

Authors: D.V. Khomenkov, S.S. Ponomaryov, X. Portier, CIMAP/CEA/CNRS/ENSICAEN/UCBN, 6 Boulevard Marechal Juin, 14000 Caen, France, L.Yu. Melnichuk, L.Yu. Khomenkova, F. Gourbilleau, CIMAP/CEA/CNRS/ENSICAEN/UCBN, 6 Boulevard Marechal Juin, 14000 Caen, France, O.V. Melnichuk

Institutions: Nizhyn Gogol State University, National University of Kyiv-Mohyla Academy, V.E. Lashkaryov Institute of Semiconductor Physics

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W4417538011

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