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The chemistry of Si{sub 3}N{sub 4} and Si deposition studied using molecular beam techniques

Year: 1992

Type: article

Source: OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

Authors: Richard J. Buss, P Shing Ho, W.G. Breiland

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W49650649

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