Year: 1991
Type: article
Abstract: The thermoelectric properties of Sb-doped n-type and Ag-doped p-type Mg2Si0.6Ge0.4 samples were investigated in the temperature range 300 to 900 K. The scattering factor was determined as 0.0 by measuring the temperature dependence of Hall mobility. Thermoelectric power and electrical conductivity were measured, and thermal conductivity was evaluated using the measured value at 300 K. The maximum figure-of-merits Z’s were estimated to be 1.61×10−3 K−1 at 663 K for the n-type and 2.67×10−3 K−1 at 629 K for the p-type, respectively. From the fact that the dimensionless figure-of-merits ZT’s exceeded unity, the Mg2Si1−xGex solid solution semiconductors can be expected as a new promissing material for high-efficiecy thermoelectric energy conversion in the middle-temperature range.
Authors: Hiroyuki Kon, Yasutoshi Noda, Yoshitaka Furukawa, Isao Nishida, Katashi Masumoto
Institutions: Tohoku University, Ishinomaki Senshu University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W570782181