Work

Dopant Diffusion in Si and SiO2 During Rapid Thermal Annealing

Year: 1997

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.1997.a-5-1

Author: Richard B. Fair

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W601523713

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