Year: 2024
Type: article
Abstract: This article presents the results of a study of the capacitance- voltage characteristics of MSM photodiode structures with silicon-based potential barriers. The results of studies aimed at creating Au-nCdS-nSi- pCdTe-Au photodiode structures for the spectral range of 1.0-1.4 microns with an area of 29 mm2, which were obtained by vacuum evaporation in a quasi-closed volume of sputtering layers of cadmium sulfide and cadmium telluride, are presented. onto a silicon substrate with resistivity ρ = 607.47 Ohm∙cm. A distinctive feature of the resulting photodiode Au - nCdS-nSi - pCdTe - Au structures are two-way sensitive and have a low capacitance value of C = 23.3 pF at room temperature.
Authors: Sharifa Utamuradova, Khojakbar Daliev, Shakhrukh Daliev, Sultanpasha Muzafarova, Kakhramon Fayzullaev, Gulnoza Muzafarova
Institution: National University of Uzbekistan
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W6884547414
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