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Study on ESD characteristics of T-shape gate GaN HEMT microwave devices

Year: 2025

Type: article

Abstract: The failure mechanisms and influencing factors of Si-based GaN HEMT devices under ESD events were systematically investigated. The study analyzed the failure voltage distribution of the devices under various bias conditions and utilized EMMI to pinpoint abnormal regions responsible for device degradation, followed by micro-area characterization. Furthermore, the impact of key process parameters, such as the geometric dimensions of the T-gate, including gate foot width, gate head width, and total gate width, on the anti-static robustness of the devices was examined. Mechanism analyses were conducted to elucidate these effects. The findings provide valuable insights and practical guidance for optimizing the ESD performance and enhancing the reliability of Si-based GaN HEMT devices.

Source: DOAJ (DOAJ: Directory of Open Access Journals)

DOI: 10.16157/j.issn.0258-7998.246116

Authors: Ni Zhiyuan, Bai Lin, Ling Gang, Bao Cheng, Zhang Junyun

Institution: The 28th Research Institute of China Electronics Technology Group Corporation

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W6887578523

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