Work

Formation of Clusters of Atoms of Holmium in Silicon

Year: 2025

Type: article

Abstract: The paper presents technology for a phased low-temperature diffusion doping of silicon with Holmium that helps engineer clusters of impurity atoms distributed across the entire bulk material. The authors have shown that no surface erosion or formation of alloys and silicides on the surface are detected while applying low temperature diffusion technology which normally takes place during high-temperature diffusion doping. The authors revealed the increased thermal and radiation resistance of silicon samples containing clusters of impurity atoms of Holmium.

Source: Multidisciplinary Journal of Science and Technology

DOI: 10.5281/zenodo.15263709

Author: A.R.Toshev

Institution: Tashkent State Technical University named after Islam Karimov

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W6893175329

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