Supplementary document for High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters - 6172649.pdf
Year: 2022
Type: supplementary-materials
Abstract: Details of the surface morphology of the GaSb epilayer based on AlSb nucleation layer with different V/III flux ratios and temperatures; GaSb epilayer grown at different temperatures; the surface morphology of the GaSb epilayer with different thickne
Source: Figshare
Authors: Tang, Tianyi, zhan, wenkang, SHEN, Chao, li, manyang, XU, Bo, Wang, Zhanguo, Zhao, Chao
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W6902319115
Cites:
Cited by:
Related to: