Structural and optical characterization of hole-doped Ge/SiGe multiple quantum wells for mid-infrared photonics
Year: 2024
Type: article
Abstract: \nThe structural and optical properties of p-doped Ge quantum wells separated by SiGe barriers are presented. The composition profile was determined by atom probe tomography and X-ray diffraction measurements. The energy and broadening of the fundamental intersubband transition were studied by Fourier transform infrared spectroscopy which revealed a strong absorption peak around 8.5 μm making this or similar heterostructures suitable for the realization of optoelectronic devices working in the fingerprint region.\n
Authors: Marco Faverzani, Stefano Calcaterra, Davide Impelluso, Raffaele Giani, Jin-Hee Bae, Dan Buca, Michele Virgilio, Daniel Chrastina, Paolo Biagioni, Jacopo Frigerio
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
Funder: European Commission
Award: G972786147
OpenAlex ID: W6903324838
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