Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors
Year: 2024
Type: article
Abstract: Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 mu m with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.
Authors: Seidel, Lukas, Liu, Teren, Concepcion, Omar, Marzban, Bahareh, Kiyek, Vivien, Spirito, Davide, Schwarz, Daniel, Benkhelifa, Aimen, Schulze, Jörg, Ikonic, Zoran, Hartmann, Jean-Michel, Chelnokov, Alexei, Witzens, Jeremy, Capellini, Giovanni, Oehme, Michael, Grützmacher, Detlev, Buca, Dan
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W6910462778
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