On the Process of Charge Carrier Drift on Recombination Centers in Semiconductors
Year: 2024
Type: article
Abstract: The paper discusses the process of charge carrier drift on recombination centers in semiconductors. The process consists in the fact that the interaction with recombination centers of charge carriers does not disappear, but on the contrary they change their direction, and participate in conductivity. Such behavior of charge carriers by recombination centers or this process was called the "Bohr-Omon" effect.
Source: CyberLeninK (CyberLeninka)
Author: Olimov L.
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W6911562136
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