Work

Supplement Number 1

Year: 2025

Type: article

Abstract: It includes the detailed geometrical parameters, defect formation energies, piezoelectric tensors, and the average sensitivity of internal parameters for wurtzite Al₁₋ₓScₓN under various defect types and oxygen concentrations.

Source: Figshare

DOI: 10.60893/figshare.jap.29365769

Authors: Wang, Xian, Acharya, Shashidhara, Wang, Peng, Zhao, Yiming, Yao, Kui, Shen, Lei

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W6921110750

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