96-Kb Voltage-Controlled-Magnetic-Anisotropy MRAM for In-Situ Reservoir Computing with High Endurance ($\geq 10^{12}$), Sub-Ns Operation (0.3 Ns) and Ultralow Power Consumption (40 fJ)
Year: 2025
Type: conference-paper
Authors: Jie Yu, Zheng Zhu, Albert Lee, Xiaohan Huang, Yule Zhang, Yu Li, Kaiwen Shen, Yifan Gao, Yingfen Wei, Hao Jiang, Xumeng Zhang, Ming Wang, Di Wu, Xianzhe Chen, Qi Liu, Ming Liu
Institution: Fudan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W6926403383