Work

Power Cycling Reliability of Paralleled IGBT Chips Heated with Conduction and Switching Losses

Year: 2025

Type: conference-paper

Abstract: The results of a power cycling test (PCT) of switches in a commercially available baseplateless IGBT module with two paralleled chips are presented. The thermal imbalance between the two paralleled chips caused by direct bonded copper (DBC) substrate layout design was found to be the most influencing factor for lifetime of these switches. A modification of the DBC layout is suggested to homogenize thermal loading of the paralleled chips.

Source: HAL (Le Centre pour la Communication Scientifique Directe)

DOI: 10.34746/epe2025-0063

Authors: Abuogo, James, Lutz, Josef, Basler, Thomas

Institution: Chemnitz University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: green

OpenAlex ID: W6927479108

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