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Efficiency and Cost Comparison of GaN/Si and SiC/Si Hybrid ANPC Three-phase Inverter

Year: 2025

Type: conference-paper

Abstract: This paper evaluates the benefits of a hybrid Active Neutral Point Clamped (ANPC) topology that combines Wide Band Gap (WBG) materials, Gallium Nitride (GaN) or Silicon Carbide (SiC), with Silicon (Si) technologies. The proposed topology enables the integration of GaN semiconductors, typically rated up to 650 V, into 800 V bus applications— an input voltage that the automotive market tends to reach. Using hybridization of semiconductor technologies, the system achieves substantial cost reduction without compromising efficiency. The concept is experimentally validated using a 15 kW threephase prototype.

Source: HAL (Le Centre pour la Communication Scientifique Directe)

DOI: 10.34746/epe2025-0171

Authors: Gondat, Manex, Garcia-Bediaga, Asier, Avila, Ander, Rujas, Alejandro

Language: English

Topic: Multilevel Inverters and Converters

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: green

OpenAlex ID: W6927835552

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