Phosphorus- and Boron-doped Poly-Si/Siox Passivating Contacts via Inkjet Printing
Year: 2024
Type: conference-paper
Abstract: In this work, we utilize the advantages of inkjet printing technology to achieve maskless localized doping of both n- and p-type poly-Si/SiOx passivating contacts, offering flexibility and simplicity in the fabrication process for advanced structures, such as interdigitated back contact (IBC) solar cells. By using commercially available spin-on solutions, full-area printed samples show promising passivation quality and electrical contacts, yielding an iVoc of 729 mV with ρc of 5.4 mΩ·cm² for n-type poly-Si/SiOx, and iVoc of 718 mV with ρc of 6.1 mΩ·cm² for p-type poly-Si/SiOx after hydrogenation. Optical microscopy shows that localized n- and p-type dopant lines with minimum feature sizes down to ~ 60 μm can be achieved. We demonstrated the simultaneous formation of localized phosphorus- and boron-doped poly-Si/SiOx passivating contacts in a single annealing step. Micro-photoluminescence (μPL) mappings confirmed the improved surface passivation of the locally doped region. Besides, high-resolution dynamic secondary ion mass spectrometry (D-SIMS) measurements revealed elevated dopant concentrations ([B] ≈ 1×1019 atom/cm3, [P] ≈ 1×1020 atom/cm3) at the doped regions. Additionally, D-SIMS results indicated the presence of unintended doping, likely due to volatile dopant species entering the gas phase during the high-temperature annealing.
Source: EU PVSEC
Authors: Wang, Jiali, Truong, Thein N., Ren, Jinlei, Adier, Marie, Creon, Laura, Peres, Paula, Chemnitzer, Rene, Corre, Pierre-Yves, Li, Zhuofeng, Nguyen, Hieu T., Stuckelberger, Josua, Macdonald, Daniel, Liu, AnYao, Phang, Sieu Pheng
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W6929151478
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