Work

Influence of On-Wafer Parasitic Effects on Mason's Gain of Down-Scaled InP HBTs

Year: 2024

Type: conference-paper

Abstract: The determination of Mason’s gain is associated with various problems for down-scaled millimeter-wave and sub-THz transistors, which compromises the reliability of the extracted maximum frequency of oscillation. In this work, we investigate the influence of on-wafer parasitic effects introduced by neighboring structures and probes on Mason’s gain. A full-wave 3D electromagnetic simulation environment is applied for this purpose. Furthermore, a fabricated down-scaled InP HBT with 300nm emitter width is considered. The simulated and measured raw scattering parameters for the 300nm InP HBT are corrected by applying an 8-term error model of the calibration technique. The systematic analysis of on-wafer parasitic effects reveals that the parasitic probe-to-probe coupling, even it is weak, is a source of peculiarities in Mason’s gain in case of 8-term correction, whereas the influence of the neighboring structures remains negligible.

Source: Zenodo (CERN European Organization for Nuclear Research)

DOI: 10.5281/zenodo.14960426

Authors: Kanitkar, Abhijeet, Doerner, Ralf, Johansen, Tom Keinicke, Heinrich, Wolfgang, Flisgen, Thomas

Institutions: Ferdinand-Braun-Institut, Technical University of Denmark

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: European Association of National Metrology Institutes

Award: G3720676636