The Influence of the Erbium Atom on the Optical Properties of Epitasial Silicon Films
Year: 2024
Type: article
Abstract: The results of growing erbium-doped epitaxial silicon layers using two different growth modes: conventional molecular beam epitaxy (MBE) and solid-phase epitaxy (SPE) are presented. It has been shown that an erbium-doped silicon layer, when deposited by SPE onto a cold substrate and subsequent annealing, exhibits more intense photoluminescence at a wavelength of 1.54 µm than layers grown by MBE.
Authors: Bazarbaeva H., Kudainazarov A., Saburov N., Sharibaev M.
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W6930735418
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