Pressure-induced Semiconductor-superconductor Transition and the Pressure Dependence of the Critical Temperature
Year: 2025
Type: conference-paper
Abstract: Under the influence of external pressure, atoms in a semiconductor are forced into closer proximity, resulting in a notable reduction of their vibrational amplitudes. This physical compression affects the electronic band structure by decreasing the width of the forbidden energy gap (band gap), a phenomenon which signals the gradual emergence of metallic behavior. As the band gap narrows, the energy required to excite electrons from the valence band to the conduction band decreases, facilitating the formation of free charge carriers.
Author: Abdullo Ahadov, Davron Dzhuraev, Farhod Khallokov
Language: English
Subfield: Geophysics
Field: Earth and Planetary Sciences
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W6930796313
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