Work

Supplementary Material for Synaptic plasticity in Co/Nb:STO memristive devices: the role of oxygen vacancies

Year: 2025

Type: supplementary-materials

Abstract: Supplementary Material with details on the model, computation of the energy potential profiles and containing an analysis of the OV diffusion, together with the associated profiles, in the absence of applied external stimuli.

Source: Figshare

DOI: 10.60893/figshare.aip.29154704

Authors: Quiñonez, Walter, Goossens, Anouk, Rubi, Diego, Banerjee, Tamalika, Sánchez, María José

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W6940165976

Cites:

Cited by:

Related to: