Work

Nanoscale InSe/GaTe van der Waals Heterojunction Diodes for Extreme Deep Ultraviolet Detection in Semiconductor Lithography and Inspection

Year: 2025

Type: article

Source: ACS Applied Nano Materials

DOI: 10.1021/acsanm.5c02221

Authors: Nahid Chaudhary, Santanu Kandar, Taslim Khan, Rajendra Singh

Institution: Indian Institute of Technology Delhi

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W6940501176

FWCI: 0.417

Cites: 68

Cited by: 2

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