Work

Static vs. Dynamic Characterization of p-GaN HEMTs: Discrepancies in Electrical Characteristics and their Dependence on Bias History

Year: 2025

Type: conference-paper

Abstract: Quasi-static electrical characteristics of p-GaN HEMTs fluctuate with bias history. This study evidences that dynamic operation is fortunately highly reproducible without pre-conditioning. The original experimental setup highlights that quasi-static data alone is insufficient for modeling dynamic behavior, while allowing precise detection of discrepancies, enabling improved transient modeling.

Source: HAL (Le Centre pour la Communication Scientifique Directe)

DOI: 10.34746/epe2025-0309

Authors: Roche, Ludovic, Trémouilles, David, Marcault, Emmanuel, Alonso, Corinne

Institutions: Laboratoire d'Analyse et d'Architecture des Systèmes, Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W6946375230

FWCI:

Cites:

Cited by:

Related to: