Work

Characterization of an Integrated GaN Driver for Power Switching Applications

Year: 2025

Type: conference-paper

Abstract: Modern GaN-HEMTs require appropriate driving circuits to enable fast switching. Thus, monolithic integration of power switches and gate drivers is necessary. Therefore, this paper demonstrates a GaN driver to control a GaN power switch. Besides static and pulsed characterization, the driver’s performance is validated through continuous switching tests, demonstrating effective operation with turn-on and turn-off times of an emulated load of 1.68 ns and 1.84 ns, respectively.

Source: HAL (Le Centre pour la Communication Scientifique Directe)

DOI: 10.34746/epe2025-0040

Authors: Kohlhepp, Benedikt, Halhoul, Houssam, Wieczorek, Nick, Geng, Xiaomeng, Schellhase, Lars, Hilt, Oliver, Dickerhoff, Sibylle

Institutions: Technische Universität Berlin, Ferdinand-Braun-Institut

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W6946589534

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