The Influence of Surface Recombination Velocity on the Exclu-sion of Minority Charge Carriers in Cdxhg1-xte Monocrystals
Year: 2025
Type: article
Abstract: This study experimentally investigates the effect of surface recombination velocity on the parameters of photoconductors based on CdxHg1-xTe with 0.18≤X≤0.30 under conditions of carrier extraction due to a longitudinal electric field. The analysis of the obtained experimental results established that for samples with a ground surface, the specific detectivity Dλmax is almost independent of U_bias, whereas for samples with a polished surface, Dλmax decreases with increasing U_bias. It was determined that the surface recombination velocity significantly affects the exclusion effect and its mechanism in CdxHg1-xTe monocrystals. The obtained dependencies indicate a significant influence of surface recombination on the parameters of photodetectors operating in the mode of minority carrier extraction in CdxHg1-xTe-based devices.
Authors: Shukurov N., Jahangirov M., Abbasov V.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W6949555160
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