Work

A Gate Drive Circuit for GaN GIT Power Semiconductors with a Minimal Number of Components

Year: 2025

Type: conference-paper

Source: Publication Server of Bonn-Rhein-Sieg University of Applied Sciences (Bonn-Rhein-Sieg University of Applied Sciences)

DOI: 10.30420/566541057

Authors: Sah, Bikash, Sprunck, Sebastian, Peinsipp, Moritz, Jung, Marco

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W6965216591

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