Investigations on proton irradiation effects on the performance of microcontroller
Year: 2025
Type: article
Abstract: The instrument and control (I&C) system plays a vital role in ensuring safety, efficiency, and reliability in industrial applications. The I&C systems are built with various semiconductor-based electronic devices, more in general Commercial-Off-The-Shelf (COTS) devices. These devices are typically designed for normal operating conditions and it may perhaps not withstand the extreme environment of high radiation witnessed in radiation-rich environments. In the present work, the 8051 COTS microcontroller is exposed to proton irradiation with 7, 7.5 and 25 MeV energy and the performance was monitored under offline and online conditions. In both offline and online experiments, single-event effects (SEE) are observed in the device, beyond the proton ion fluence of 5 × 1013 p/cm2 for offline experiments and 4.76 × 1011 p/cm2 for online experiments. Furthermore, it is also found that the DUT exhibited 100 times more tolerance to the ion fluence during offline experiments compared to online experiments. This discrepancy is due to the fact that, under power-off conditions, radiation has less immediate effect on electronics as the operation of electronic devices requires active electrical current and voltage levels.
Source: Figshare
Authors: Sharma, Charu, Behera, R. P., Panigrahi, B. K., Khan, Saif A., Tripathi, Ambuj, Maji, Binoy Kumar, Gayathri, N., Amirthapandian, S.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W6977378158
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