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Surface-dominant transport in Weyl semimetal NbAs nanowires for next-generation interconnects

Year: 2025
Type: preprint
Abstract: Ongoing demands for smaller and more energy efficient electronic devices necessitate alternative interconnect materials with lower electrical resistivity at reduced dimensions. Despite the emergence of many promising candidates, synthesizing high quality nanostructures remains a major bottleneck in evaluating their performance. Here, we report the successful synthesis of Weyl semimetal NbAs nanowires via thermomechanical nanomolding, achieving single crystallinity and controlled diameters as small as 40 nm. Our NbAs nanowires exhibit a remarkably low room-temperature resistivity of 9.7 +/- 1.6 microOhm-cm, which is three to four times lower than their bulk counterpart. Theoretical calculations corroborate the experimental observations, attributing this exceptional resistivity reduction to surface dominant conduction with long carrier lifetime at finite temperatures. Further characterization of NbAs nanowires and bulk single crystals reveals high breakdown current density, robust stability, and superior thermal conductivity. Collectively, these properties highlight the strong potential of NbAs nanowires as next-generation interconnects, which can surpass the limitations of current copper-based interconnects. Technologically, our findings present a practical application of topological materials, while scientifically showcasing the fundamental properties uniquely accessible in nanoscale platforms.
Authors: Cheon, Yeryun, Kiani, Mehrdad T., Tu, Yi-Hsin, Kumar, Sushant, Duong, Nghiep Khoan, Kim, Jiyoung, Sam, Quynh P., Wang, Han, Kushwaha, Satya K., Ng, Nicolas, Lee, Seng Huat, Kielar, Sam, Li, Chen, Koumoulis, Dimitrios, Siddique, Saif, Mao, Zhiqiang, Jin, Gangtae, Tian, Zhiting, Sundararaman, Ravishankar, Lin, Hsin, Liang, Gengchiau, Chen, Ching-Tzu, Cha, Judy J.
Language: English
Open Access status: green
OpenAlex ID: W6979375218
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