Work

Low Sheet Resistance AlGaN/AlN/GaN HEMT with High Al-Content in the AlGaN

Year: 2024

Type: conference-paper

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Piotrowicz, Clémentine, Mohamad, Blend, Malbert, Nathalie, Torrengo, Simona, Olivier, Aurélien

Institution: Laboratoire de l'Intégration du Matériau au Système

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W6983257175

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