Year: 2024
Type: dissertation
Abstract: With the ever-increasing demands for fast, energy-efficient, and scalable memory, Resistive Random Access Memory (RRAM) devices have gained rigorous research interest as a potential substitute for existing memory technologies. The simple Ti/TiN/Ga2O3/Ti/Pt device structure exhibits excellent switching characteristics under ultra-low compliance current levels, which is highly desirable for RRAM devices for efficient data storage and retrieval. Moreover, the temperature-dependent behavior of this device is examined at different temperatures. Excellent performance is observed from room temperature - up to 250O C while operating under ultra-low current levels in nA scales. To the best of our knowledge, operating at the compliance current of ~10 nA that we have demonstrated for the Ga2O3 RRAM is the lowest to have been recorded for this type of RRAM device. The switching voltage exhibits a strong temperature dependence. It decreases with increasing temperature. Additionally, the resistance ratio (ROFF/RON) reaches as high as 106, indicating a clear distinction between resistance states and an improved read margin. On top of that, the device's multilevel cell (MLC) storage capability was observed for 3-bit storage. These findings highlight the potential of β-Ga2O3 for next-generation memory applications.
Author: Shrestha, Rikesh
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W6992593351
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