Work

Mitigation of Interface Trap-Induced Bump Effects in p-Type MOS Capacitor

Year: 2025

Type: conference-paper

Abstract: peer reviewed

Source: Open Repository and Bibliography (University of Liège)

Authors: Eleutério de Lorêdo, Francisco, Vanderheyden, Benoît, Rael Stéphane,, Leveque Jean,, Nguyen, Ngoc Duy

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W7002106296

FWCI:

Cites:

Cited by:

Related to: