Work

Nanoporous metal-oxide memory

Year: 2015

Type: article

Abstract: A nanoporous (NP) memory may include a non-porous layer and a nanoporous layer sandwiched between the bottom and top electrodes. The memory may be free of diodes, selectors, and/or transistors that may be necessary in other memories to mitigate crosstalk. The nanoporous material of the nanoporous layer may be a metal oxide, metal chalcogenide, or a combination thereof. Further, the memory may lack any additional components. Further, the memory may be free from requiring an electroformation process to allow switching between ON/OFF states.

Source: Rice Research Repository (Rice University)

Authors: Tour, James M., Wang, Gunuk, Yang, Yang

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W7011682536

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