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50 nm InP HEMTs with Tgates Fabricated by Single-Step Electron Beam Lithography for High-Frequency Applications

Year: 2025

Type: conference-paper

Abstract: No abstract available.

Source: ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)

Authors: Cheng, Huihua, Jiang, Long, Ofiare, Afesomeh, Shi, Jichun, Ju, Taiyu, Mcgenn, William, George, Danielle, Li, Chong

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W7020922980

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