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GaN and wide-bandgap semiconductor devices for power electronics applications

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Year: 2024
Type: conference-paper
Abstract: International audience
Source: HAL (Le Centre pour la Communication Scientifique Directe)
Authors: Buckley, Julien, Godignon, Philippe, Le Royer, Cyrille, Nowak, Etienne, Escoffier, René, El Amrani, Mohammed, Ackermann, Valentin, Charles, Matthew, El Rammouz, Hala, Mohamad, Blend, Labau, Timothée, Masante, Cédric, Piotrowicz, Clémentine, Zgheib, Joëlle, Kumar, Mohit, Fayolle-Lecocq, Murielle, Biscarrat, Jérôme, Becu, Stéphane, Kaltsounis, Thomas, M'Qaddem, Zakariae, Plaza Arguello, David, Torrengo, Simona, Gorisse, Marie, Widiez, Julie, Abbas, Ahmad, Maurya, Vishwajeet, Gillot, Charlotte, Lamy, Yann
Language: English

Topic: GaN-based semiconductor devices and materials
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences

Open Access status: green

Funder: Agence Nationale de la Recherche
Awards: G1190173965, Vertical GaN for High Voltage
OpenAlex ID: W7028353990
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