Work

Using of the 2D materials signature for thermal Raman measurements of power devices

Year: 2025

Type: conference-paper

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Boussekri, Mohammed, Moreau, Mathieu, Sommet, Raphaël, Carisetti, Dominique, Cholet, Julie, Frogé, Lucie, Desgué, Eva, Garabedian, Patrick, Legagneux, Pierre, Sarazin, Nicolas, Brunel, David, Seneor, Pierre, Dlubak, Bruno, Renaudin, Vincent, Moinet, Tony

Institutions: XLIM, Université de Limoges, Thales (France), Centre National de la Recherche Scientifique, Laboratoire Albert Fert, STMicroelectronics (France)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7043755342

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