Work

A Comparison Study of Substrates Quality for GaN Vertical Devices

Year: 2025

Type: conference-paper

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Fernandes Paes Pinto Rocha, Pedro, Nadaud, Kevin, Greco, Giuseppe, Slimani Tlemcani, Taoufik, Bockowski, Michal, Bartoli, Florian, Frayssinet, Éric, Cordier, Yvon, Roccaforte, Fabrizio, Alquier, Daniel

Institutions: GREMAN, Matériaux, Microélectronique, Acoustique, Nanotechnologies, Institute for Microelectronics and Microsystems, Institute of High Pressure Physics, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7055641493

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