Work

Improved Breakdown Voltage and RF Power Characteristics of GaN HEMTs by Layered C/Fe-Doped GaN Buffer

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3592916

Authors: Qian Yu, Meng Zhang, Ling Yang, Zou Xu, Hao Lu, Chunzhou Shi, Mei Wu, Bin Hou, Qingyuan Chang, Wenze Gao, Jiale Du, Xiaohua Ma, Yue Hao

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation

Awards: G3372063648, G4557561485, G492156009, G5536712496, G5752182232, G6079549076, G6950084816, G7185126207, G7225868883

OpenAlex ID: W7076050615

FWCI: 1.86

Cites: 30

Cited by: 6

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