Work

Enhanced Reliability of Ferroelectric GaN HEMTs With Reduced Depolarization-Field Effect

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3599158

Authors: Hyeong Jun Joo, Gyuhyung Lee, Yoojin Lim, Brendan Hanrahan, Geonwook Yoo

Institutions: Soongsil University, DEVCOM Army Research Laboratory, United States Army Combat Capabilities Development Command, United States Army

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7076051044

FWCI: 0.68

Cites: 28

Cited by: 3

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