Reliability Analysis of MOS Devices Using Burst Pulse CV Measurement Technique
Year: 2025
Type: article
Authors: Himanshu Marothya, Atul Sachan, Vishwas Acharya, Sandip Mondal
Institution: Indian Institute of Technology Bombay
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: National Research Foundation
Award: G618716542
OpenAlex ID: W7076051645