Work

A Series-Shunt Compact GaN HEMT With High Isolation and Broadband Performance for RF Switch Application

Year: 2025

Type: article

Source: IEEE Microwave and Wireless Technology Letters

DOI: 10.1109/lmwt.2025.3594252

Authors: Xu Zou, Meng Zhang, Ling Yang, Bin Hou, Mei Wu, Chupeng Yi, Hao Lu, Mao Jia, Qian Yu, Chunzhou Shi, Shiming Li, Qingyuan Chang, Wenze Gao, Yutong Jiang, Xiaohua Ma, Yue Hao

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Fundamental Research Funds for the Central Universities

Awards: G1822841752, G3372063648, G5536712496, G5752182232, G6424370169, G6950084816, G7185126207, G7225868883, G8039185487

OpenAlex ID: W7076053584

FWCI: 1.55

Cites: 23

Cited by: 5

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